Implementation of Large Scale Deep Learning Non-Destructive Methods for Characterizing 4H-SiC Materials
نویسندگان
چکیده
A whole wafer method for industrial high volume, non-destructive characterizing of extended defects is demonstrated 150 mm and 200 4H-SiC wafers. Deep learning (DL) coupled with techniques (NDT, DL-NDT) involving fast optical microscopy methods correlates industry accepted chemistry physics-based etch diffraction defect characterization. The application the DL-NDT shown to reproduce distributions achieved by threading dislocations (TD), basal plane (BPD), screw (TSD). An example algorithm development described show progress toward implementing method, as well density compared multiple status this technique large-scale production includes validation results ensure consistent reliable. ability use ultimately will result in better correlation device behavior provide feedback crystal growth processes improve substrate wafers, while reducing need methods.
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ژورنال
عنوان ژورنال: Defect and Diffusion Forum
سال: 2023
ISSN: ['1012-0386', '1662-9507', '1662-9515', '2813-0928']
DOI: https://doi.org/10.4028/p-08c7e9